Study on Nodulation Behavior of ITO Ceramic Target during Sputtering
[1]Luo Wen,Sun Benshuang,Liu Shuhan,et al.Study on Nodulation Behavior of ITO Ceramic Target during Sputtering[J].Journal of Zhengzhou University (Engineering Science),2021,42(02):88-93.[doi:10.13705/j.issn.1671-6833.2021.02.003]
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Journal of Zhengzhou University (Engineering Science)[ISSN
1671-6833/CN
41-1339/T] Volume:
42
Number of periods:
2021 02
Page number:
88-93
Column:
Public date:
2021-04-12
- Title:
- Study on Nodulation Behavior of ITO Ceramic Target during Sputtering
- CLC:
- -
- DOI:
- 10.13705/j.issn.1671-6833.2021.02.003
- Abstract:
- The application and properties of ITO ceramic target were seriously affected by its nodulation behavior, it was extremely important to grasp the formation mechanism of nodulation. So the experimental study on the ITO target was carried out by magnetron sputtering technology under different sputtering parameters. The nodulation behavior of target was analyzed by scanning electron microscope (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The results showed that the depth of etch ring increased with increasing sputtering time, and then the nodules were formed on the target surface and spread to the etching ring，which reduced the sputtering rate at the edge of etching ring. The nodules were mainly composed of non-stoichiometric ITO, which lacked of O but rich in Sn, and was formed by reverse deposition at low sputtering rate. The nodulation component deviated from its stoichiometric ratio, due to the sputtering difference of Sn atoms in different regions and the O ions were easily formed on target surface. The formation of nodules in the early stage of sputtering was mainly caused by the Sn-rich precipitated particles in In2O3/Sn crystals. And they were easy to accumulate charges and induce arc discharge due to the poor electrical and thermal conductivity, which made them break under the thermal stress. The scattered particles became the new induction points of nodules, resulting in the rapid increase in the coverage of nodules.
- References:
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Last Update:
2021-05-30