Synthesis, Characterization and Nitrogen Dioxide Gas Sensing Applications of Pd Doped ZnO Semiconductor Material
[1]Cao Chenlu,Cao Chunmei,Guo Meiyuan,et al.Synthesis, Characterization and Nitrogen Dioxide Gas Sensing Applications of Pd Doped ZnO Semiconductor Material[J].Journal of Zhengzhou University (Engineering Science),2019,40(06):38-42.[doi:10.13705/j.issn.1671-6833.2019.06.012]
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Journal of Zhengzhou University (Engineering Science)[ISSN
1671-6833/CN
41-1339/T] Volume:
40
Number of periods:
2019 06
Page number:
38-42
Column:
Public date:
2019-11-16
- Title:
- Synthesis, Characterization and Nitrogen Dioxide Gas Sensing Applications of Pd Doped ZnO Semiconductor Material
- Keywords:
- Pd/ZnO; metal organic framework; NO2; gas sensor; gas sensitivity
- CLC:
- TP212.2
- DOI:
- 10.13705/j.issn.1671-6833.2019.06.012
- Abstract:
- Nano-sized ZnO materials were prepared using the porous structure of metal-organic frameworks (MOFs) material as the precursor, and the sensing performance of this ZnO-based semiconductor nano-material with different ratios of Pd for the different concentrations of NO2 gas was studied, When the Pd doping is 1wt%, the doped ZnO nanomaterial has better gas-sensing response to NO2. The optimum operating temperature is 235 °C, and when the NO2 concentration is reduced to 5 ppm, the sample still has good gas sensing performance.
- References:
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Last Update:
2019-11-25