Synthesis, Characterization and Nitrogen Dioxide Gas Sensing Applications of Pd Doped ZnO Semiconductor Material

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Synthesis, Characterization and Nitrogen Dioxide Gas Sensing Applications of Pd Doped ZnO Semiconductor Material

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[1]Cao Chenlu,Cao Chunmei,Guo Meiyuan,et al.Synthesis, Characterization and Nitrogen Dioxide Gas Sensing Applications of Pd Doped ZnO Semiconductor Material[J].Journal of Zhengzhou University (Engineering Science),2019,40(06):38-42.[doi:10.13705/j.issn.1671-6833.2019.06.012]

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Journal of Zhengzhou University (Engineering Science)[ISSN 1671-6833/CN 41-1339/T] Volume: 40卷 Number of periods: 2019 06 Page number: 38-42 Column: Public date: 2019-11-16

Title:: Synthesis, Characterization and Nitrogen Dioxide Gas Sensing Applications of Pd Doped ZnO Semiconductor Material

Author(s):: Cao Chenlu; Cao Chunmei; Guo Meiyuan; Lu Qifang; Zhan Zili;Gao Jian; School of Chemical Engineering and Energy, Zhengzhou University

Keywords:: Pd/ZnO; metal organic framework; NO2; gas sensor; gas sensitivity

CLC:: TP212.2

DOI:: 10.13705/j.issn.1671-6833.2019.06.012

Abstract:: Nano-sized ZnO materials were prepared using the porous structure of metal-organic frameworks (MOFs) material as the precursor, and the sensing performance of this ZnO-based semiconductor nano-material with different ratios of Pd for the different concentrations of NO2 gas was studied, When the Pd doping is 1wt%, the doped ZnO nanomaterial has better gas-sensing response to NO2. The optimum operating temperature is 235 °C, and when the NO2 concentration is reduced to 5 ppm, the sample still has good gas sensing performance.

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Last Update: 2019-11-25