Influence of Annealing Temperature on Structure and Properties of Nb-doped TiO2 Thin Films
[1]Su Leisheng,Lin Yu,Dong Lin,et al.Influence of Annealing Temperature on Structure and Properties of Nb-doped TiO2 Thin Films[J].Journal of Zhengzhou University (Engineering Science),2018,39(02):86-91.[doi:10.13705/j.issn.1671-6833.2018.02.011]
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Journal of Zhengzhou University (Engineering Science)[ISSN
1671-6833/CN
41-1339/T] Volume:
39
Number of periods:
2018 02
Page number:
86-91
Column:
Public date:
2018-03-30
- Title:
- Influence of Annealing Temperature on Structure and Properties of Nb-doped TiO2 Thin Films
- CLC:
- -
- Abstract:
- Nb-doped TiO2 transparent conductive thin films were prepared on Glass substrates by magnetron sputtering method. The structure and the photoelectric properties of the films were characterized by using X-ray diffraction (XRD), atomic force microscope (AFM),UC-Vis spectroscopy and four probe resitance tester. The results showed that the anatase phase Nb-doped TiO2 thin films were obtained when the annealing temperature above 250℃, also the structure and the photoelectricl properties were improved with the temperature increased. The best visible light transmissivity reached to 80% and resistivity droped to 2.5×10 -3 Ωcm when temperature at 300℃. As the annealing temperature were risen to 350℃, the films began to appear rutile phase, then the photoelectric properties were decreased. Moreover Nb doping was beneficial to reduce the crystal phase transformation temperature of the TiO2 thin film. The Nb-doped TiO2 thin film absorption edge also produced blue shift, and the blue shift degree of the thin films absorption edge was different with the change of annealing temperatures.
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Last Update:
2018-04-02