[1]Xiang Bing,Hou Weizhou.A new high-electron mobility transistor I.-V. analytical model[J].Journal of Zhengzhou University (Engineering Science),2008,29(03):31-34.[doi:10.3969/j.issn.1671-6833.2008.03.008]
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Journal of Zhengzhou University (Engineering Science)[ISSN
1671-6833/CN
41-1339/T] Volume:
29卷
Number of periods:
2008年03期
Page number:
31-34
Column:
Public date:
1900-01-01
- Title:
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A new high-electron mobility transistor I.-V. analytical model
- Author(s):
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Xiang Bing; Hou Weizhou
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- Keywords:
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High electron mobility transistors; model; two-dimensional electronic gas; Velocity-field
- CLC:
-
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- DOI:
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10.3969/j.issn.1671-6833.2008.03.008
- Abstract:
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With the development of communication technology, the gate length of HEMT devices becomes shorter and shorter, and the early speed-field empirical formula can no longer accurately describe this change as the gate length continues to decrease. Through the computer simulation of the existing velocity-field empirical formula, it is found that there is a certain error between it and the measured literature data, so an improved velocity-field empirical formula is proposed. Based on the linear charge control model, a new high-electron mobility transistor (HEMT) I.-V. model is analyzed by considering the channel length modulation effect. The simulation results show that the model has high accuracy.