Effects of Deposition Conditions on Morphology and Oxidation Resistance of CVD-SiC Coatings
[1]Sun Jiaqing,Li Jiangtao,Guo Chun,et al.Effects of Deposition Conditions on Morphology and Oxidation Resistance of CVD-SiC Coatings[J].Journal of Zhengzhou University (Engineering Science),2021,42(06):75-80.[doi:10.13705/j.issn.1671-6833.2021.04.025]
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Journal of Zhengzhou University (Engineering Science)[ISSN
1671-6833/CN
41-1339/T] Volume:
42
Number of periods:
2021 06
Page number:
75-80
Column:
Public date:
2021-11-10
- Title:
- Effects of Deposition Conditions on Morphology and Oxidation Resistance of CVD-SiC Coatings
- Keywords:
- CVD; SiC coating; substrate position; deposition pressure; morphology; oxidation resistance
- CLC:
- -
- DOI:
- 10.13705/j.issn.1671-6833.2021.04.025
- Abstract:
- Silicon carbide (SiC) coatings were prepared on the surface of high-purity graphite substrates by chemical vapor deposition, and the effects of deposition pressure and substrate position on the morphologies and oxidation resistance of the coatings were studied. The results showed that as the distances between the substrates at first and the air distribution plate increased, the preference of the <111> growth direction of the grains strengthened and then weakened, and the gravel-like growth characteristics of the grains also showed a law of change of strengthening first and then weakening. When the distances between the substrates and the air distribution plate were relatively close, the coatings were prone to pores. As the distances increased, the pores gradually disappeared, and the oxidation resistance of the coatings increased. With the further increase of the distances, the phenomenon of demarcation began to appear, causing the oxidation resistance of the coatings to decrease. Due to the preference of the <111> growth direction of the grains was weakened with the increase of deposition pressure, the gravel-like growth characteristics of the grains were also weakened. When the deposition pressure was 2 kPa, the coating had no obvious defects, the coating had excellent oxidation resistance, and when the deposition pressure increased to 5 kPa and 20 kPa, the coatings had defects of demarcation and delamination, respectively, resulting in a decrease in the oxidation resistance of the coatings. It was concluded that when the substrate position was 450 mm and the deposition pressure was 2 kPa, a SiC coating with dense structure, better combination with the substrate and excellent oxidation resistance could be prepared.
- References:
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Last Update:
2021-12-17