[1]曹晨璐,高健.Pd掺杂ZnO材料的制备及其对NO2气敏性能研究[J].郑州大学学报(工学版),2019,40(06):38-42.
 Synthesis, Characterization and Nitrogen Dioxide Gas Sensing Applications of Pd Doped ZnO Semiconductor Material[J].Journal of Zhengzhou University (Engineering Science),2019,40(06):38-42.
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Pd掺杂ZnO材料的制备及其对NO2气敏性能研究()
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《郑州大学学报(工学版)》[ISSN:1671-6833/CN:41-1339/T]

卷:
40
期数:
2019年06期
页码:
38-42
栏目:
出版日期:
2019-11-16

文章信息/Info

Title:
Synthesis, Characterization and Nitrogen Dioxide Gas Sensing Applications of Pd Doped ZnO Semiconductor Material
作者:
曹晨璐高健
文献标志码:
A
摘要:
本文以含Zn的金属有机框架材料作为模板,通过热处理方法制备出颗粒分布相对均匀、颗粒度较小 (50 - 200 nm) 的ZnO材料,分别比较该ZnO半导体纳米材料及不同Pd负载量的ZnO纳米材料对NO2气体的传感性能。研究结果表明,贵金属Pd的引入及ZnO载体颗粒度的降低均有利于提高Pd/ZnO纳米材料对NO2的气敏性能和选择性;当Pd负载量为1% 时,该负载型ZnO纳米材料对NO2具有更好的气敏响应性能,最佳工作温度为 235 ℃ ,且当NO2浓度降至5 ppm,该样品对NO2仍具有气敏传感性能。
Abstract:
Nano-sized ZnO materials were prepared using the porous structure of metal-organic frameworks (MOFs) material as the precursor, and the sensing performance of this ZnO-based semiconductor nano-material with different ratios of Pd for the different concentrations of NO2 gas was studied, When the Pd doping is 1wt%, the doped ZnO nanomaterial has better gas-sensing response to NO2. The optimum operating temperature is 235 °C, and when the NO2 concentration is reduced to 5 ppm, the sample still has good gas sensing performance.
更新日期/Last Update: 2019-11-25