[1]向兵,侯卫周..一种新的高电子迁移率晶体管Ⅰ-Ⅴ解析模型[J].郑州大学学报(工学版),2008,29(03):31-34.[doi:10.3969/j.issn.1671-6833.2008.03.008]
　Xiang Bing,Hou Weizhou.A new high-electron mobility transistor I.-V. analytical model[J].Journal of Zhengzhou University (Engineering Science),2008,29(03):31-34.[doi:10.3969/j.issn.1671-6833.2008.03.008]
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一种新的高电子迁移率晶体管Ⅰ-Ⅴ解析模型()
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《郑州大学学报(工学版)》[ISSN:1671-6833/CN:41-1339/T]

卷:
29
期数:
2008年03期
页码:
31-34
栏目:
出版日期:
1900-01-01

文章信息/Info

Title:
A new high-electron mobility transistor I.-V. analytical model
作者:
向兵; 侯卫周.
河南大学,物理与电子学院,河南,开封,475001, 河南大学,物理与电子学院,河南,开封,475001
Author(s):
Xiang Bing; Hou Weizhou
关键词:
高电子迁移率晶体管;  模型;  二维电子气;  速度-场
Keywords:
High electron mobility transistors;  model;  two-dimensional electronic gas;  Velocity-field
DOI:
10.3969/j.issn.1671-6833.2008.03.008
文献标志码:
A
摘要:
随着通信技术的发展,HEMT器件的栅长变得越来越短,而早期的速度-场经验公式随着栅长的不断减小已不能精确地描述这种变化.通过对现有的速度-场经验公式的计算机模拟仿真,发现其与实测的文献数据之间存在一定的误差,因而提出一种改进的速度-场经验公式.在线性电荷控制模型的基础上,考虑沟道长度调制效应,解析出一种新的高电子迁移率晶体管(HEMT)Ⅰ-Ⅴ模型.仿真结果表明,该模型具有较高的精度.
Abstract:
With the development of communication technology, the gate length of HEMT devices becomes shorter and shorter, and the early speed-field empirical formula can no longer accurately describe this change as the gate length continues to decrease. Through the computer simulation of the existing velocity-field empirical formula, it is found that there is a certain error between it and the measured literature data, so an improved velocity-field empirical formula is proposed. Based on the linear charge control model, a new high-electron mobility transistor (HEMT) I.-V. model is analyzed by considering the channel length modulation effect. The simulation results show that the model has high accuracy.

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更新日期/Last Update: 1900-01-01