[1]罗文、孙本双、刘书含、陈杰、孟将、李树荣.ITO陶瓷靶材的磁控溅射过程中结瘤行为研究[J].郑州大学学报(工学版),2021,42(02):88-93.[doi:10.13705/j.issn.1671-6833.2021.02.003]
　Luo Wen,Sun Benshuang,Liu Shuhan,et al.Study on Nodulation Behavior of ITO Ceramic Target during Sputtering[J].Journal of Zhengzhou University (Engineering Science),2021,42(02):88-93.[doi:10.13705/j.issn.1671-6833.2021.02.003]
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ITO陶瓷靶材的磁控溅射过程中结瘤行为研究()
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《郑州大学学报(工学版)》[ISSN:1671-6833/CN:41-1339/T]

卷:
42卷
期数:
2021年02期
页码:
88-93
栏目:
出版日期:
2021-04-12

文章信息/Info

Title:
Study on Nodulation Behavior of ITO Ceramic Target during Sputtering
作者:
罗文、孙本双、刘书含、陈杰、孟将、李树荣
西北稀有金属材料研究院稀有金属特种材料国家重点实验室;郑州大学河南省资源与材料工业技术研究院;
Author(s):
Luo Wen; Sun Benshuang; Liu Shuhan; Chen Jie; Meng General; Li Shurong;
State Key Laboratory of Rare Metal Special Materials of Rare Metal Materials in Northwest China; Institute of Resources and Material Industry Technology, Henan University of Zhengzhou University;
关键词:
Keywords:
ITO target;  magnetron sputtering;  nodulation;  microstructure;  nodulation mechanism
DOI:
10.13705/j.issn.1671-6833.2021.02.003
文献标志码:
A
摘要:
ITO陶瓷靶材溅射过程中的表面形貌、刻蚀环的深度、“结瘤”的显微结构及化学组分，并探讨“结瘤”形成机理。结果表明：随着溅射时间的延长，刻蚀环深度增大，靶材表面开始出现“结瘤”并向刻蚀环蔓延。“结瘤”主要由缺O富Sn的非化学计量比ITO组成，In2O3:Sn晶内的富Sn析出相粒子是溅射早期“结瘤”形成的主要原因，其散落的颗粒会成为新“结瘤”的诱发点，导致“结瘤”覆盖率迅速增大
Abstract:
The application and properties of ITO ceramic target were seriously affected by its nodulation behavior, it was extremely important to grasp the formation mechanism of nodulation. So the experimental study on the ITO target was carried out by magnetron sputtering technology under different sputtering parameters. The nodulation behavior of target was analyzed by scanning electron microscope (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The results showed that the depth of etch ring increased with increasing sputtering time, and then the nodules were formed on the target surface and spread to the etching ring，which reduced the sputtering rate at the edge of etching ring. The nodules were mainly composed of non-stoichiometric ITO, which lacked of O but rich in Sn, and was formed by reverse deposition at low sputtering rate. The nodulation component deviated from its stoichiometric ratio, due to the sputtering difference of Sn atoms in different regions and the O ions were easily formed on target surface. The formation of nodules in the early stage of sputtering was mainly caused by the Sn-rich precipitated particles in In2O3/Sn crystals. And they were easy to accumulate charges and induce arc discharge due to the poor electrical and thermal conductivity, which made them break under the thermal stress. The scattered particles became the new induction points of nodules, resulting in the rapid increase in the coverage of nodules.

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更新日期/Last Update: 2021-05-30