[1]罗文,孙本双,刘书含,等.ITO陶瓷靶材的磁控溅射过程中结瘤行为研究[J].郑州大学学报(工学版),2021,42(2):88-93.[doi:10.13705/j.issn.1671-6833.2021.02.003]
　Luo Wen,Sun Benshuang,Liu Shuhan,et al.Study on Nodulation Behavior of ITO Ceramic Target during Sputtering[J].Journal of Zhengzhou University (Engineering Science),2021,42(2):88-93.[doi:10.13705/j.issn.1671-6833.2021.02.003]
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ITO陶瓷靶材的磁控溅射过程中结瘤行为研究()
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《郑州大学学报(工学版)》[ISSN:1671-6833/CN:41-1339/T]

卷:
42
期数:
2021年2期
页码:
88-93
栏目:
出版日期:
2021-04-12

文章信息/Info

Title:
Study on Nodulation Behavior of ITO Ceramic Target during Sputtering
作者:
罗文1,孙本双2,刘书含2,陈杰2,孟将1,李树荣1
1.西北稀有金属材料研究院 稀有金属特种材料国家重点实验室，宁夏 石嘴山 753000；2.郑州大学 河南省资源与材料工业技术研究院，河南 郑州 450001
Author(s):
1.State Key Laboratory of Special Rare Metal Materials, Northwest Rare Metal Materials Research Institute, Shizuishan 753000, China; 2.Henan Province Industrial Technology Research Institute of Resources and Materials, Zhengzhou University, Zhengzhou 450001, China
关键词:
Keywords:
ITO target;  magnetron sputtering;  nodulation;  microstructure;  nodulation mechanism
DOI:
10.13705/j.issn.1671-6833.2021.02.003
文献标志码:
A
摘要:

ITO 陶瓷靶材的结瘤行为严重影响靶材的应用及其溅射薄膜性能，对 结瘤的形成机理进行深入研究具有重要意义。 针对不同参数设置的 ITO 靶材进行磁控溅射 ， 利用扫描电子显微镜（SEM） 、 X 射线衍射仪 （ XRD ） 以及 X 射线光电子能谱仪 （ XPS ） 等技术分析靶材在溅射过程中的结瘤行为 。 结果表明： 随着溅射时间的延长 ， 刻蚀环深度增加 ， 靶材表面开始出现结瘤并向刻蚀环蔓延 ， 结瘤的出现使刻蚀环边缘溅射速率降低 。 结瘤主要由缺 O 富 Sn 的非化学计量比 ITO 组成 ， 是靶材被溅射原子在低溅射速率处反向沉积形成 。 由于 Sn 原子在不同区域的溅射差异以及靶面被溅射的 O 原子易形成 O 离子 ， 从而使结瘤组分偏离化学计量比 。 In 2 O 3 /Sn （ Sn 固溶于 In 2 O 3 ） 晶内的富 Sn 析出相粒子是溅射早期结瘤形成的主要原因 ， 导电性及导热性极差的结瘤在溅射过程中易积聚电荷并诱发弧光放电 ， 使其在热应力作用下 破裂 ， 散落的颗粒会成为新结瘤的诱发点 ! 导致结瘤覆盖率迅速增大 。


Abstract:
The application and properties of ITO ceramic target were seriously affected by its nodulation behavior, it was extremely important to grasp the formation mechanism of nodulation. So the experimental study on the ITO target was carried out by magnetron sputtering technology under different sputtering parameters. The nodulation behavior of target was analyzed by scanning electron microscope (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The results showed that the depth of etch ring increased with increasing sputtering time, and then the nodules were formed on the target surface and spread to the etching ring，which reduced the sputtering rate at the edge of etching ring. The nodules were mainly composed of non-stoichiometric ITO, which lacked of O but rich in Sn, and was formed by reverse deposition at low sputtering rate. The nodulation component deviated from its stoichiometric ratio, due to the sputtering difference of Sn atoms in different regions and the O ions were easily formed on target surface. The formation of nodules in the early stage of sputtering was mainly caused by the Sn-rich precipitated particles in In2O3/Sn crystals. And they were easy to accumulate charges and induce arc discharge due to the poor electrical and thermal conductivity, which made them break under the thermal stress. The scattered particles became the new induction points of nodules, resulting in the rapid increase in the coverage of nodules.

参考文献/References:

[1] MEI F S,YUAN T C,LI R D,et al.Effects of particle size and dispersion methods of In2O3-SnO2 mixed powders on the sintering properties of indium tin oxide ceramics[J].International journal of applied ceramic technology,2018,15(1):89-100.

[2] 帕提曼·尼扎木丁,玛日耶姆·图尔贡,阿布力孜·伊米提.MOFs薄膜的可控制备及在光波导气体传感器中的应用[J].郑州大学学报(工学版),2019,40(6):53-56.[3] QI C,CHEN J,SUN B S,et al.Microstructure and phase transformation of IGZO targets with different stoichiometry during sintering[J].Ceramics international,2020,46(8):10568-10577.
[4] CHEN J,ZHONG J M,LUO W,et al.Study on powder preparation of IGZO target and its effect on sintering[J].Journal of alloys and compounds,2019,800:468-477.
[5] HONG S J,HAN J I.Synthesis and characterization of indium tin oxide (ITO) nanoparticle using gas evaporation process[J].Journal of electroceramics,2006,17(2/3/4):821-826.
[6] ZHANG W,ZHU G S,ZHI L,et al.Structural,electrical and optical properties of indium tin oxide thin films prepared by RF sputtering using different density ceramic targets[J].Vacuum,2012,86(8):1045-1047.
[7] BELLIDO-GONZwidth=8,height=11,dpi=110LEZ V,DANIEL B,COUNSELL J,et al.Reactive gas control of non-stable plasma conditions[J].Thin solid films,2006,502(1/2):34-39.
[8] CHOU C S,GUO M G,LIU K H,et al.Preparation of TiO2 particles and their applications in the light scattering layer of a dye-sensitized solar cell[J].Applied energy,2012,92:224-233.
[9] WU K R,TING C H,WANG J J,et al.Characteristics of graded TiO2 and TiO2/ITO films prepared by twin DC magnetron sputtering technique[J].Surface and coatings technology,2006,200(20/21):6030-6036.
[10] 姜辛,孙超,洪瑞江.透明导电氧化物薄膜[M].北京:高等教育出版社,2008.
[11] OMATA T,KITA M,OKADA H,et al.Characterization of indium-tin oxide sputtering targets showing various densities of nodule formation[J].Thin solid films,2006,503(1/2):22-28.
[12] 孔伟华.ITO靶材在磁控溅射过程中的毒化现象[J].无机材料学报,2002,17(5):1083-1088.
[13] 姚吉升,唐三川,陈坚,等.ITO靶材在溅射过程中结瘤行为的研究[J].真空科学与技术,2002,22(12):47-50.[14] NAKASHIMA K,KUMAHARA Y.Effect of tin oxide dispersion on nodule formation in ITO sputtering[J].Vacuum,2002,66(3/4):221-226.
[15] LIPPENS P,SEGERS A,HAEMERS J,et al.Chemical instability of the target surface during DC-magnetron sputtering of ITO-coatings[J].Thin solid films,1998,317(1/2):405-408.
[16] ANSELL R O,DICKINSON T,POVEY A F,et al.Quantitative use of the angular variation technique in studies of tin by X-ray photoelectron spectroscopy[J].Journal of electron spectroscopy and related phenomena,1977,11(3):301-313.
[17] ISHIBASHI S,HIGUCHI Y,OTA Y,et al.Low resistivity indium-tin oxide transparent conductive films.II.effect of sputtering voltage on electrical property of films[J].Journal of vacuum science & technology A:vacuum,surfaces,and films,1990,8(3):1403-1406.

更新日期/Last Update: 2021-05-30